Semnan University Press Journal of Modeling and Simulation in Electrical and Electronics Engineering 2821-0786 2 1 2022 05 01 Low Phase Noise X-band Dielectric Resonator Oscillator 37 41 6886 10.22075/mseee.2022.25767.1090 EN Hamed Nimehvari Varcheh Faculty of Electrical and Computer Engineering Semnan University, Semnan, Iran. Pejman Rezaei Faculty of Electrical and Computer Engineering Semnan University, Semnan, Iran. Journal Article 2022 01 01 In this article, an X-band low phase noise dielectric resonator oscillator is investigated. For this purpose, a dielectric resonator as a frequency stabilization section at the almost center frequency of 12 GHz is designed. The active device is a packaged GaAs FET (an ATF-36077 pHEMT). Firstly, the ATF36077 microwave transistor has been biased. The substrate of this nonplanar oscillator is Rogers RT/Duroid 5880. Finally, the dielectric resonator oscillator has been introduced as a series feedback structure. This presented X-band dielectric resonator oscillator, operating at nearly 12 GHz, exhibits a phase noise of -71 dBc/Hz and -133 dBc/Hz at 1-kHz and 1-MHz frequency offset, respectively. Also, the output power level of nearly 7 dBm is achieved. The second and third harmonic power levels are more than 50 dB and 30 dB lower than the main harmonic power level. https://mseee.semnan.ac.ir/article_6886_4e2d9b9857dc6b091e649e26ec2ba09b.pdf