This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the 2-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated results show that the proposed structure has excellent effect on the driving current. The breakdown voltage of the INL-SOI MESFET structure gets 33.33% enhancement when compared with that of the C-SOI MESFET structure. Other main characteristics such as maximum output power density, maximum oscillation frequency, and maximum available gain have been evaluated and improved in the proposed structure.
Shahnazarisani, H., Orouji, A. (2016). A Novel SOI MESFET by Implanted N Layer (INL-SOI) for High Performance Applications. Modeling and Simulation in Electrical and Electronics Engineering, 2(1), 2-2. doi: 10.22075/mseee.2018.334.1012
MLA
Hadi Shahnazarisani; Ali Asghar Orouji. "A Novel SOI MESFET by Implanted N Layer (INL-SOI) for High Performance Applications". Modeling and Simulation in Electrical and Electronics Engineering, 2, 1, 2016, 2-2. doi: 10.22075/mseee.2018.334.1012
HARVARD
Shahnazarisani, H., Orouji, A. (2016). 'A Novel SOI MESFET by Implanted N Layer (INL-SOI) for High Performance Applications', Modeling and Simulation in Electrical and Electronics Engineering, 2(1), pp. 2-2. doi: 10.22075/mseee.2018.334.1012
VANCOUVER
Shahnazarisani, H., Orouji, A. A Novel SOI MESFET by Implanted N Layer (INL-SOI) for High Performance Applications. Modeling and Simulation in Electrical and Electronics Engineering, 2016; 2(1): 2-2. doi: 10.22075/mseee.2018.334.1012
