A Novel SOI MESFET by Implanted N Layer (INL-SOI) for High Performance Applications

Document Type : Research Paper

Authors

Semnan University

Abstract

This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the 2-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulation results show that the proposed structure has an excellent effect on the driving current. The breakdown voltage of the INL-SOI MESFET structure gets a 33.33% enhancement when compared with that of the C-SOI MESFET structure. Other main characteristics such as maximum output power density, maximum oscillation frequency, and maximum available gain have been evaluated and improved in the proposed structure.

Keywords

Main Subjects

References

[1]
JP. Colinge; Silicon-on-Insulator Technology Materials to VLSI, Kluwer Academic Publishers, pp. 203-298, 2004.
[2]
Hadi Shahnazarisani, Ali A. Orouji ‘’ A novel SOI MESFET by π-shaped gate for improving the driving current ‘’, J Comput Electron: DOI 10.1007/s10825-014-0569-9, Springer Science+Business Media New York 2014.
[3]
Ali A. Orouji, Zeinab Ramezani, P. Keshavarzi, Amirhossein Aminbeidokhti '' A novel high frequency SOI MESFET by modified gate capacitances '' _ 2013 Elsevier Ltd. All rights reserved. Superlattices and Microstructures 61 (2013) 69–80.
[4]
Amirhossein Aminbeidokhti, Ali A. Orouji, Member, IEEE, and Morteza Rahimian, '' High-Voltage and RF Performance of SOI MESFET Using Controlled Electric Field Distribution'' IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 10, OCTOBER 2012.
[5]
Amirhossein Aminbeidokhti, Ali A. Orouji '' novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications '' & 2011ElsevierB.V.Allrightsreserved. Physica E 44 (2011) 708–713.
[6]
Morteza Rahimian, Ali A. Orouji, Amirhossein Aminbeidokhti “A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement “Current Applied Physics 13 (2013) 779-784.
[7]
Ali A. Orouji, Morteza Rahimian “Leakage current reduction in Nano scale fully-depleted SOI MOSFETs with modified current mechanism “Current Applied Physics 12 (2012) 1366-1371.
[8]
Morteza Rahimian, A.A. Orouji, Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation, Superlattice. Microst. 50 (2011) 667e679.
[9]
Ali A. Orouji, Hossein Elahipanah, A novel nanoscale 4H-SiC-on-insulator MOSFET using step doping channel, IEEE Trans. Device Mater. Reliab. 10 (1) (Mar. 2010) 92e95.
[10]
Device Simulator Atlas, Atlas User’s Manual, Silvaco Int. Software, Santa Clara, CA, 2013.
[11]
Amirhossein Aminbeidokhti, Ali A. Orouji, Member, IEEE, Soude Rahmaninezhad, and Masoomeh Ghasemian, '' A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution'' IEEE Trans. on Electron Devices, VOL. 59, NO. 5, May 2012.
[12]
C.L. Zhu a, Rusli a, C.C. Tin b, G.H. Zhang a, S.F.Yoon a, J. Ahn a” Improved performance of SiC MESFETs using double-recessed structure” Microelectronic Engineering, Vol. 83, pp. 92–95, 2006.
[13]
Ali A. Orouji, Amirhossein Aminbeidokhti, Morteza Rahimian, '' A Novel GaAs MESFET with Multi-Recessed Drift Region and Partly p-Type Doped Space Layer '' International conference on Electronic Devices, Systems and Applications (ICEDSA) 2011.
[14]
M. Razavi, Ali A. Orouji, Seyed Ebrahim Hosseini '' A novel SiC MESFET with recessed P-Buffer layer '' ECAI 2011 - International Conference – 4th Edition Electronics, Computers and Artificial Intelligence 30 June -2 July, 2011, Piteşti, ROMÂNIA.

Files

History

  • Receive Date: 18 May 2014
  • Revise Date: 07 April 2015
  • Accept Date: 27 January 2015

Share

How to cite

Statistics