A Novel SOI MESFET by Implanted N Layer (INL-SOI) for High Performance Applications

Document Type : Research Paper

Authors

Semnan University

Abstract

This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the 2-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulation results show that the proposed structure has an excellent effect on the driving current. The breakdown voltage of the INL-SOI MESFET structure gets a 33.33% enhancement when compared with that of the C-SOI MESFET structure. Other main characteristics such as maximum output power density, maximum oscillation frequency, and maximum available gain have been evaluated and improved in the proposed structure.

Keywords

References

[1]
JP. Colinge; Silicon-on-Insulator Technology Materials to VLSI, Kluwer Academic Publishers, pp. 203-298, 2004.
[2]
Hadi Shahnazarisani, Ali A. Orouji ‘’ A novel SOI MESFET by π-shaped gate for improving the driving current ‘’, J Comput Electron: DOI 10.1007/s10825-014-0569-9, Springer Science+Business Media New York 2014.
[3]
Ali A. Orouji, Zeinab Ramezani, P. Keshavarzi, Amirhossein Aminbeidokhti '' A novel high frequency SOI MESFET by modified gate capacitances '' _ 2013 Elsevier Ltd. All rights reserved. Superlattices and Microstructures 61 (2013) 69–80.
[4]
Amirhossein Aminbeidokhti, Ali A. Orouji, Member, IEEE, and Morteza Rahimian, '' High-Voltage and RF Performance of SOI MESFET Using Controlled Electric Field Distribution'' IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 10, OCTOBER 2012.
[5]
Amirhossein Aminbeidokhti, Ali A. Orouji '' novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications '' & 2011ElsevierB.V.Allrightsreserved. Physica E 44 (2011) 708–713.
[6]
Morteza Rahimian, Ali A. Orouji, Amirhossein Aminbeidokhti “A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement “Current Applied Physics 13 (2013) 779-784.
[7]
Ali A. Orouji, Morteza Rahimian “Leakage current reduction in Nano scale fully-depleted SOI MOSFETs with modified current mechanism “Current Applied Physics 12 (2012) 1366-1371.
[8]
Morteza Rahimian, A.A. Orouji, Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation, Superlattice. Microst. 50 (2011) 667e679.
[9]
Ali A. Orouji, Hossein Elahipanah, A novel nanoscale 4H-SiC-on-insulator MOSFET using step doping channel, IEEE Trans. Device Mater. Reliab. 10 (1) (Mar. 2010) 92e95.
[10]
Device Simulator Atlas, Atlas User’s Manual, Silvaco Int. Software, Santa Clara, CA, 2013.
[11]
Amirhossein Aminbeidokhti, Ali A. Orouji, Member, IEEE, Soude Rahmaninezhad, and Masoomeh Ghasemian, '' A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution'' IEEE Trans. on Electron Devices, VOL. 59, NO. 5, May 2012.
[12]
C.L. Zhu a, Rusli a, C.C. Tin b, G.H. Zhang a, S.F.Yoon a, J. Ahn a” Improved performance of SiC MESFETs using double-recessed structure” Microelectronic Engineering, Vol. 83, pp. 92–95, 2006.
[13]
Ali A. Orouji, Amirhossein Aminbeidokhti, Morteza Rahimian, '' A Novel GaAs MESFET with Multi-Recessed Drift Region and Partly p-Type Doped Space Layer '' International conference on Electronic Devices, Systems and Applications (ICEDSA) 2011.
[14]
M. Razavi, Ali A. Orouji, Seyed Ebrahim Hosseini '' A novel SiC MESFET with recessed P-Buffer layer '' ECAI 2011 - International Conference – 4th Edition Electronics, Computers and Artificial Intelligence 30 June -2 July, 2011, Piteşti, ROMÂNIA.
Modeling and Simulation in Electrical and Electronics Engineering
Volume 1, Issue 1
Spring 2021
Pages 7-12

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