Tunneling FET With Embedded P+ Pocket as a High Sensitivity Biosensor for Label-Free Detection

Document Type : Research Paper

Authors

1 Electrical Engineering Department, Energy Faculty, Kermanshah University of Technology, Kermanshah, Iran.

2 Electrical Engineering Department, Engineering Faculty, Imam Khomeini International University, Qazvin, Iran.

Abstract

In this paper, an efficient structure for tunneling field effect transistors (TFETs) with P+ pocket is proposed for label-free detection of biomolecules. This structure includes a double gate TFET with P+P-N+ doping profile for source, channel, and drain regions and an embedded P+ pocket in the channel to control the band-to-band tunneling (BTBT). The biomolecules are captured in the cavity region and affect the band bending. The capacitive behavior of biomolecules causes further band bending where their dielectric constant is increased. The presence of P+ pocket at the source side of TFET causes more changes in the capacitive behavior and in current and consequently increases the sensitivity. For the detection of the biomolecule with K=4, the proposed structure shows more than 60% improvement in sensitivity. It enhances the sensitivity for all investigated dielectric constants, where the enhancement is more considerable for biomolecules with higher dielectric constants. For more evaluation, the biosensor is assessed in different widths and impurity densities of P+ region. It demonstrates that the proposed structure can efficiently tolerate the variations in physical dimension and impurity concentration while it maintains higher sensitivities.
 

Keywords

Main Subjects

References

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History

  • Receive Date: 17 January 2025
  • Revise Date: 28 February 2025
  • Accept Date: 11 March 2025

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