Journal of Modeling and Simulation in Electrical and Electronics Engineering

Journal of Modeling and Simulation in Electrical and Electronics Engineering

Tunneling FET With Embedded P+ Pocket as a High Sensitivity Biosensor for Label-Free Detection

Document Type : Research Article

Authors
Milad Azarkerdar 1
Ali Naderi 2
1 Electrical Engineering Department, Energy Faculty, Kermanshah University of Technology, Kermanshah, Iran.
2 Electrical Engineering Department, Engineering Faculty, Imam Khomeini International University, Qazvin, Iran.
10.22075/mseee.2025.36592.1196
Abstract
In this paper, an efficient structure for tunneling field effect transistors (TFETs) with P+ pocket is proposed for label-free detection of biomolecules. This structure includes a double gate TFET with P+P-N+ doping profile for source, channel, and drain regions and an embedded P+ pocket in the channel to control the band-to-band tunneling (BTBT). The biomolecules are captured in the cavity region and affect the band bending. The capacitive behavior of biomolecules causes further band bending where their dielectric constant is increased. The presence of P+ pocket at the source side of TFET causes more changes in the capacitive behavior and in current and consequently increases the sensitivity. For the detection of the biomolecule with K=4, the proposed structure shows more than 60% improvement in sensitivity. It enhances the sensitivity for all investigated dielectric constants, where the enhancement is more considerable for biomolecules with higher dielectric constants. For more evaluation, the biosensor is assessed in different widths and impurity densities of P+ region. It demonstrates that the proposed structure can efficiently tolerate the variations in physical dimension and impurity concentration while it maintains higher sensitivities.
 
Keywords
Tunneling FET
Biomolecule
Sensitivity
Band-to-Band Tunneling
Band Bending
Subjects
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  • Receive Date 17 January 2025
  • Revise Date 28 February 2025
  • Accept Date 11 March 2025